MR18R326GAG0 - (32Mx18) 16pcs RIMM Module based on 576Mb A-die

Samsung semiconductor

MR18R326GAG0 Datasheet Preview — Preview of MR18R326GAG0 PDF

Datasheet Details

Part number	MR18R326GAG0
Manufacturer	Samsung semiconductor
File Size	259.11 KB
Description	(32Mx18) 16pcs RIMM Module based on 576Mb A-die
Datasheet	MR18R326GAG0_Samsungsemiconductor.pdf

MR18R326GAG0 Product details

Description

Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68, B70, B72, B74, B76, B78, B80, B82, B84, B86, B88, B90, B92 B10 B12 B34 A20, B20, A22, B22, A24 A14 A12 I I I I I I RSL RSL VCMOS RSL RSL RSL I/O Type Description Gnd Ground reference for RDRAM cor

Features

High speed up to 1066 MHz RDRAM storage.
184 edge connector pads with 1mm pad spacing.
Module PCB size : 133.35mm x 34.93mm x 1.27mm.
Each RDRAM device has 32 banks, for a total of 512.
Gold plated edge connector pad contacts.
Serial Presence Detect(SPD) support.
Operates from a 2.5 volt supply (±5%).
Powerdown self refresh modes.
Separate Row and Column buses for higher efficiency.
WBGA lead free package.

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Published: Jan 19, 2006 |